Investigation of buffer layers for GaN grown by MBE

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Yun, Feng ^a   Reshchikov, Michael A ^a   Visconti, Paolo ^a   Jones, Keith M ^a   Wang, Dongfeng ^a   Redmond, Marc ^a   Cui, Jie ^a   Litton, Cole W ^a   Morkoç, Hadis ^a  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; DEPOSITION; ELECTRIC PROPERTIES; FILM GROWTH; HALL EFFECT; MOLECULAR BEAM EPITAXY; SAPPHIRE; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

ELECTRICAL TRANSPORT ANALYSIS; HALL MEASUREMENT; HIGH RESOLUTION X-RAY DIFFRACTOMETRY; HIGH TEMPERATURE BUFFER LAYER; LOW TEMPERATURE BUFFER LAYER; MEDIUM TEMPERATURE BUFFER LAYER; NITRIDATED SAPPHIRE SUBSTRATE; STACKED BUFFER LAYER; TOPOLOGICAL ANALYSIS;

GALLIUM NITRIDE;

EID: 0035557631     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)