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Volumn 637, Issue , 2001, Pages
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Accurate dry etching with fluorinated gas for two-dimensional Si photonic crystal
a
a
NTT CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
ANISOTROPY;
COMPUTER SIMULATION;
DRY ETCHING;
ELECTRONIC EQUIPMENT;
ENERGY GAP;
GASES;
SINGLE CRYSTALS;
THERMAL EFFECTS;
PHOTONIC CRYSTALS;
SEMICONDUCTING SILICON;
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EID: 0035557485
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (4)
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References (11)
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