Anisotropic etching of Si and WSiN using ECR plasma of SF6-CF4 gas mixture

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 6 A, 2000, Pages 3672-3676

  Takahashi, Chiharu ^a   Jin, Yoshito ^a   Nishimura, Kazumi ^a   Matsuo, Seitaro ^a  

^a NIT Telecommunications Energy Laboratories   (Japan)

Author keywords

Anisotropic etching; Carbon; ECR plasma; GaAs MESFET; SF6 CF4; Si; Wafer contamination; WSiN

Indexed keywords

ANISOTROPY; BINARY MIXTURES; CARBON; DECOMPOSITION; ELECTRON CYCLOTRON RESONANCE; FLUOROCARBONS; MESFET DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SULFUR COMPOUNDS;

SULFUR HEXAFLUORIDE;

PLASMA ETCHING;

EID: 0034204902     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3672     Document Type: Article

References (9)

1. T. Ono, M. Oda, C. Takahashi and S. Matsuo: J. Vac. Sci. & Technol. B 4 (1986) 696.
2. C. Takahashi, H. Nishimura, M. Kiuchi and S. Matsuo: Symp. VLSI Tech., Dig. Tech. Pap., San Diego. 1988 (IEEE Service Center, Piscataway) p. 83.
3. C. Takahashi and S. Matsuo: J. Vac. Sci. & Technol. B 12 (1994) 3347.
4. K. Nishimura, K. Onodera, S. Aoyama, M. Tokumitsu and K. Yamasaki: IEEE Trans. Electron Devices 44 (1997) 2113.
5. C. Takahashi, Y. Jin, K. Nishimura, T. Ono and S. Matsuo: Dig. Pap., 9th Int. MicroProcess Conf., Kitakyushu, 1996 (Business Center for Academic Societies Japan, Tokyo, 1996) p. 160.
6. Y. Jin, C. Takahashi, K. Nishimura, T. Ono and S. Matsuo: J. Vac. Sci. & Technol. B 15 (1997) 2639.
7. S. Matsuo: Appl. Phys. Lett. 36 (1980) 768.
8. M. Sekimoto, A. Ozawa, T. Ohkubo and H. Yoshihara: Ext. Abstr. 16th Int. Conf. Solid State Devices and Materials., Kobe, 1984 (Business Center for Academic Societies Japan, Tokyo, 1984) p. 23.
9. H. Nishimura, M. Kiuchi and S. Matsuo: Jpn. J. Appl. Phys. 32 (1993) 322.