Etching characteristics of α-type Ta film using Cl2 electron cyclotron resonance (ECR) plasma

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 9 A/B, 2000, Pages

  Takahashi, Chiharu ^a   Tsuchizawa, Tai ^a   Nishimura, Hiroshi ^a   Ono, Toshiro ^a   Oda, Masatoshi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CHLORINE; CRYSTAL STRUCTURE; ELECTRON CYCLOTRON RESONANCE; ETCHING; PLASMAS; SPUTTERING; TANTALUM; X RAYS;

ORIENTATION-DEPENDENT ETCHING; X RAY MASKS;

METALLIC FILMS;

EID: 0034269229     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l945     Document Type: Article

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