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Volumn 669, Issue , 2001, Pages
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A quantitative model of the electrical activity of metal silicide precipitates in silicon based on the Schottky effect
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CHARGE CARRIERS;
CHARGE TRANSFER;
DIFFUSION;
ELECTRIC FIELD EFFECTS;
FERMI LEVEL;
INTERFACES (MATERIALS);
PRECIPITATION (CHEMICAL);
THERMIONIC EMISSION;
METALLIC PRECIPITATES;
SCHOTKY EFFECT;
SEMICONDUCTING SILICON;
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EID: 0035557345
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-669-j6.11 Document Type: Conference Paper |
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Times cited : (2)
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References (16)
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