Contrastive recombination behaviour of metal suicide and oxygen precipitates in n-type silicon: Attempt at an explanation

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 365-370

  Seifert, W ^a   Kittler, M ^a   Seibt, M ^b   Buczkowski, A ^c  

^a IHP   (Germany)

^b UNIVERSITY OF GÖTTINGEN   (Germany)

^c Siltec Silicon   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; IRON; NICKEL COMPOUNDS; OXYGEN; SEMICONDUCTOR DEVICE MANUFACTURE; SILICIDES; SILICON;

DETECTION LIMITS; METAL SILICIDE; N TYPE SILICON; OXYGEN PRECIPITATES; OXYGEN PRECIPITATION; POTENTIAL BARRIERS; RECOMBINATION CENTRES; SPACE CHARGE REGIONS;

PRECIPITATION (CHEMICAL);

EID: 17544383705     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

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