Diffusion and defect structure in nitrogen implanted silicon

Materials Research Society Symposium - Proceedings

Volumn 669, Issue , 2001, Pages J641-J646

  Dokumaci, Omer ^a   Kaplan, Richard ^a   Khare, Mukesh ^a   Ronsheim, Paul ^a   Burnham, Jay ^a   Domenicucci, Anthony ^a   Li, Jinghong ^a   Fleming, Robert ^a   Adam, Lahir S ^a   Law, Mark E ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; INTERFACES (MATERIALS); ION IMPLANTATION; NITROGEN; OXIDATION; PERMITTIVITY; POSITIVE IONS; RAPID THERMAL ANNEALING; RECRYSTALLIZATION (METALLURGY); STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT STRUCTURES;

SEMICONDUCTING SILICON;

EID: 0035557334     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-669-j6.4     Document Type: Article

References (11)