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Volumn 670, Issue , 2001, Pages K411-K4110

Chemical vapor deposition of titania/silica and zirconia films

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; COMPOSITION; ELLIPSOMETRY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICA; SUBSTRATES; SURFACES; THIN FILMS; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAYS;

EID: 0035557331     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-670-k4.1     Document Type: Article
Times cited : (2)

References (26)
  • 8
    • 0034180064 scopus 로고    scopus 로고
    • Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide
    • (2000) Adv. Mater. Opt. Electron. , vol.10 , Issue.3-5 , pp. 105-114
    • Smith, R.C.1    Ma, T.2    Hoilien, N.3
  • 9
    • 0024735796 scopus 로고
    • Metal alkoxides as precursors for electronic and ceramic materials
    • (1989) Chem. Rev. , vol.89 , pp. 1317-1322
    • Bradley, D.C.1
  • 18
  • 26
    • 0033339404 scopus 로고    scopus 로고
    • Remote plasma enhanced-metal organic chemical vapor deposition of zirconium oxide/silicon oxide alloy, (ZrO2)x-(SiO2)1-x (x. ltoreq. 0.5), thin films for advanced high-K gate dielectrics
    • Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics
    • (1999) Mater. Res. Soc. Symp. Proc. , vol.567 , pp. 343-348
    • Wolfe, D.1    Flock, K.2    Therrien, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.