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Volumn 45, Issue 12, 2001, Pages 2023-2027

Effect of Si, Mg, and Mg-Zn doping on structural properties of a GaN layer grown by metalorganic chemical vapor deposition

(4) Cho, H K a Lee, J Y a Kim, K S b Yang, G M b

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Chonbuk National University (South Korea)

Author keywords

Dislocation; Doping; GaN; Mg Zn codoping; Transmission electron microscopy

Indexed keywords

DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

DOPANTS; HIGH RESOLUTION X-RAY DIFFRACTION (HRXRD);

GALLIUM NITRIDE;

EID: 0035545654 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(01)00194-0 Document Type: Article

Times cited : (4)

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