Sidegating effect of GaN MESFETs grown on sapphire substrate

Electronics Letters

Volumn 34, Issue 6, 1998, Pages 598-600

  Egawa, T ^a   Ishikawa, H ^a   Jimbo, T ^a   Umeno, M ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENTS; ELECTRODES; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSCONDUCTANCE;

SIDEGATING EFFECTS;

MESFET DEVICES;

EID: 0032026074     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980423     Document Type: Article

References (6)

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2. BINARI, S.C.: 'GaN FETs for high-temperature and microwave applications', Electrochem. Soc. Proc., 1995, 95-21, pp. 136-143
3. 1-xN heterojunction', Appl. Phys. Lett., 1993, 63, pp. 1214-1215
4. BURM, J., SCHAFF, W.J., EASTMAN, L., AMANO, H., and AKASAKI, I.: '75 Å GaN channel modulation doped field effect transistors', Appl. Phys. Lett., 1996, 68, pp. 2849-2851
5. AKTAS, O., FAN, Z.F., BOTCHKAREV, A., MOHAMMAD, S.N., ROTH, M., JENKINS, T., KEHIAS, L., and MORKOC, H.: 'Microwave performance of AlGaN/GaN inverted MODFET's', IEEE Electron Device Lett., 1997, 18, pp. 293-295
6. PONCE, F.A., BOUR, D.P., GOTZ, W., and WRIGHT, P.J.: 'Spatial distribution of the luminescence in GaN thin films', Appl. Phys. Lett., 1996, 68, pp. 57-59