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Physica Status Solidi (B) Basic Research

Volumn 228, Issue 1, 2001, Pages 235-238

Structural properties of GaN grown by pendeo-epitaxy with In-doping

(8) Hong, Young Kue a Kim, Chi Sun a Jung, Hung Sub a Hong, Chang Hee a Kim, Min Hong b Leem, Shi Jong b Cho, Hyung Koun c Lee, Jeong Yong c

a Chonbuk National University (South Korea)

b LG Electronics Inc (South Korea)

c Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035541082 PISSN: 03701972 EISSN: None Source Type: Journal
DOI: 10.1002/1521-3951(200111)228:1<235::AID-PSSB235>3.0.CO;2-V Document Type: Article

Times cited : (5)

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