Improvement of the SiO2/Si interface characteristics by two-step deposition with intermediate plasma treatment using O2/He gas

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2067-2072

  Yi, Chung ^a   Kim, Hyo Uk ^a   Rhee, Shi Woo ^a   Oh, Sang Ho ^a   Park, Chan Gyung ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRAPS; HELIUM; OXIDATION; OXYGEN; PHASE TRANSITIONS; PLASMA DENSITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

CAPACITANCE VOLTAGE MEASUREMENT; INTERFACE TRAP DENSITY; PLASMA DAMAGE; PLASMA TREATMENT; TETRAETHYLORTHOSILICATE; TWO STEP DEPOSITION;

INTERFACES (MATERIALS);

EID: 0035519105     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1412657     Document Type: Article

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