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Volumn , Issue , 2000, Pages 345-347
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A new continuous model for deep submicron MOSFETs
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Author keywords
[No Author keywords available]
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Indexed keywords
CHANNEL LENGTH MODULATION (CLM);
DRAIN CURRENTS;
GRADUAL CHANNEL APPROXIMATION (GCA);
SURFACE POTENTIAL;
APPROXIMATION THEORY;
CAPACITANCE;
ELECTRIC CURRENTS;
ELECTRIC FIELDS;
ELECTRIC POTENTIAL;
FUNCTIONS;
ITERATIVE METHODS;
MATHEMATICAL MODELS;
PARAMETER ESTIMATION;
POISSON EQUATION;
MOSFET DEVICES;
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EID: 6344262125
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (1)
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References (5)
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