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Volumn , Issue , 2000, Pages 345-347

A new continuous model for deep submicron MOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH MODULATION (CLM); DRAIN CURRENTS; GRADUAL CHANNEL APPROXIMATION (GCA); SURFACE POTENTIAL;

EID: 6344262125     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (1)

References (5)
  • 2
    • 0005962537 scopus 로고
    • Approach to scaling
    • N. Einspruch and G. Gildenblat, editors, Academic Press
    • P. K. Ko, "Approach to scaling", in Advanced MOS device physics, N. Einspruch and G. Gildenblat, editors, Academic Press, 1989.
    • (1989) Advanced MOS Device Physics
    • Ko, P.K.1
  • 3
    • 0029306016 scopus 로고
    • Modeling the polysilicon depletion effect and its impact on submicron CMOS circuit performance
    • N. D. Arora, R. Rios, and C.-L. Huang, "Modeling the polysilicon depletion effect and its impact on submicron CMOS circuit performance," IEEE Trans. Electron Devices, vol. 42, pp. 935-943, 1995.
    • (1995) IEEE Trans. Electron Devices , vol.42 , pp. 935-943
    • Arora, N.D.1    Rios, R.2    Huang, C.-L.3
  • 5
    • 0028386555 scopus 로고
    • MOSFET modeling for analog circuit CAD: Problems and Prospects
    • Y. P. Tsividis and K. Suyama, "MOSFET modeling for analog circuit CAD: Problems and Prospects," IEEE J. Solid-State Circuits, vol. 29, pp. 210-216, 1994.
    • (1994) IEEE J. Solid-state Circuits , vol.29 , pp. 210-216
    • Tsividis, Y.P.1    Suyama, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.