Surface-related optical anisotropy of GaInP, InP, and GaP

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 558-563

  Luo, J S ^a,b   Geisz, J F ^b   Olson, J M ^b   Wu, Meng Chyi ^c  

^a Rodel Inc   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Reflectance difference spectroscopy

Indexed keywords

ANISOTROPY; ANNEALING; HYDROGEN; LIGHT REFLECTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOSPHORUS COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SPECTROSCOPIC ANALYSIS; SURFACE STRUCTURE; SURFACE TREATMENT; THERMAL EFFECTS;

OPTICAL ANISOTROPY; PHOSPHINE; REFLECTANCE DIFFERENCE SPECTROSCOPY (RDS); SEMICONDUCTING GALLIUM INDIUM PHOSPHIDE; SEMICONDUCTING GALLIUM PHOSPHIDE; SURFACE RECONSTRUCTION;

SEMICONDUCTOR MATERIALS;

EID: 0031547404     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00041-9     Document Type: Article

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