OMVPE growth of p-type GaN using solution Cp2Mg

Journal of Electronic Materials

Volumn 30, Issue 11, 2001, Pages 1382-1386

  Qi, Yundong ^a   Musante, Charles ^a   Lau, Kei May ^a   Smith, Lesley ^b   Odedra, Rajesh ^b   Kanjolia, Ravi ^c  

^a UNIVERSITY OF MASSACHUSETTS   (United States)

^b Epichem Limited   (United Kingdom)

^c Epichem Inc   (United States)

Author keywords

Gallium nitride; GDMS; Magnesium doping; OMVPE; SIMS; Solution Cp2Mg

Indexed keywords

CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; GALLIUM NITRIDE; MAGNESIUM COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SOLVENTS; VAPOR PRESSURE;

MAGNESIUM DOPING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035516885     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0187-8     Document Type: Article

References (14)