The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN : Mg grown by MOVPE

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 274-279

  Schineller, B ^a   Guttzeit, A ^a   Lim, P H ^a   Schwambera, M ^a   Heime, K ^a   Schon O ^b   Heuken, M ^a,b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

Annealing; GaN; MOCVD; p Doping; Photoluminescence

Indexed keywords

ANNEALING; HALL EFFECT; MAGNESIUM; MAGNETIC FIELD MEASUREMENT; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DONOR-ACCEPTOR PAIR RECOMBINATION (DAP);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032477190     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00630-7     Document Type: Article

References (8)

1. S. Nakamura, T. Mukai, M. Senoh, N. Iwasa, Jpn. J. Appl. Phys. 31 (1992) L139.
2. B. Schineller, A. Guttzeit, O. Schön, M. Heuken, K. Heime, R. Beccard, Proc. 7th Int. Conf. on SiC, III-Nitrides and Rel. Materials, Materials Science Forum, vols. 264-268, 1998, p. 1397.
3. B. Schineller, A. Guttzeit, F. Vertommen, O. Schön, M. Heuken, K. Heime, R. Beccard, J. Crystal Growth 189/190 (1998) 798.
4. W. Götz, N.M. Johnson, J. Walker, D.P. Bour, R.A. Street, Appl. Phys. Lett. 68 (1996) 667.
5. C.G. Van de Walle, Phys. Rev. B 56 (1997) R10 020.
6. L. Eckey, U. von Gfug, J. Holst, A. Hoffmann, B. Schineller, K. Heime, M. Heuken, O. Schön, R. Beccard, J. Crystal Growth 189/190 (1998) 523.
7. U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, P. Schlotter, Appl. Phys. Lett. 72 (1998) 1326.
8. O. Schön, B. Schineller, M. Heuken, R. Beccard, J. Crystal Growth 189/190 (1998) 335.