Properties of solution TMI as an OMVPE source

Journal of Electronic Materials

Volumn 29, Issue 1, 2000, Pages 156-160

  Ravetz, M S ^a   Smith, L M ^a   Rushworth, S A ^a   Leese, A B ^a   Kanjolia, R ^b   Davies, J I ^c   Blunt, R T ^c  

^a Epichem Ltd   (United Kingdom)

^b Epichem Inc   (United States)

^c Epitaxial Prod International Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; OXYGEN; PHASE TRANSITIONS; PRESSURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SOLID SOLUTIONS; THERMAL EFFECTS;

SOLID TRIMETHYLINDIUM;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033888555     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0112-6     Document Type: Article

References (8)

1. D.M. Frigo and A.W. Gal, U.S. patent 5,232,869 (filed on March 8, 1993).
2. N.D. Gerrard, L.M. Smith, A.C. Jones, and J. Bosnell, J. Cryst. Growth 121, 500 (1992).
3. D.M. Frigo, W. Van Berkel, W.A.H. Maassen, G.P.M Van Mier, J.H. Wilkie, and A.W. Gal, J. Cryst. Growth 124, 99 (1992).
4. B.R. Butler and J.P. Stagg, J. Cryst. Growth 94, 481 (1989).
5. A.W. Laugengayer and W.F. Gilliam, J. Am. Chem. Soc. 63, 477 (1941).
6. J.S. Roberts, J.P.R. David, L.M. Smith, and P.L. Tihanyi, J. Cryst. Growth 195, 668 (1998).
7. G.E. Coates and R.A. Whitcombe, J. Chem. Soc. 3351 (1956).
8. J.S. Roberts, L.M. Smith, and P.L. Tihanyi, Semiconductor Optoelectronics in press (to be published in Feb. 2000), IEEE publications.