The treatment of reacting surfaces for finite-volume schemes on unstructured meshes

Journal of Computational Physics

Volumn 173, Issue 2, 2001, Pages 512-526

  Mazumder, Sandip ^a   Lowry, Samuel A ^a  

^a CFD RESEARCH CORPORATION   (United States)

Author keywords

Chemical vapor deposition; Finite volume; Surface reaction; Unstructured mesh

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MESH GENERATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS;

CELL TOPOLOGY; CHEMICAL VAPOUR DEPOSITION; FINITE RATE; FINITE VOLUME SCHEMES; FINITE-VOLUME; MULTISTEPS; NUMERICAL PROCEDURES; REACTION BOUNDARY CONDITIONS; TWO-DIMENSIONAL; UNSTRUCTURED MESHES;

SURFACE REACTIONS;

EID: 0035506161     PISSN: 00219991     EISSN: None     Source Type: Journal    
DOI: 10.1006/jcph.2001.6890     Document Type: Article

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