Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations

Journal of Crystal Growth

Volumn 203, Issue 4, 1999, Pages 516-533

  Salinger, Andrew G ^a   Shadid, John N ^a   A Hutchinson, Scott A ^a   Hennigan, Gary L ^a   Devine, Karen D ^a   Moffat, Harry K ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; FINITE ELEMENT METHOD; HEAT TRANSFER; MATHEMATICAL MODELS; PARALLEL PROCESSING SYSTEMS; REACTION KINETICS; SEMICONDUCTOR GROWTH;

TRIMETHYLGALLIUM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033149426     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00140-2     Document Type: Article

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