Observation of Te inclusions in Cd1-yZnyTe crystal wafer

Guangdianzi Jiguang/Journal of Optoelectronics Laser

Volumn 12, Issue 11, 2001, Pages 1140-1143

  Huang, Hui ^a   Xu, Jing Jun ^a   Zhang, Cun Zhou ^a   Pan, Shun Chen ^a   Zhang, Guang Yin ^a  

^a NANKAI UNIVERSITY   (China)

Author keywords

Cd1 yZnyTe; Te inclusions; Transmission infrared microscopy

Indexed keywords

INCLUSIONS; TELLURIUM;

TE INCLUSIONS; TRANSMISSION INFRARED MICROSCOPY;

CRYSTALLINE MATERIALS;

EID: 0035502768     PISSN: 10050086     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

1. CdZnTe substrate producibility and its impact on IRFPA yield
2. Analysis of CZT crystals and detectors grown in Russia and the Ukraine by high-pressure bridgman methods
3. Spectroscopic evaluation of n-type CdZnTe gamma-ray spectrometers
4. Recent progress in CdZnTe crystals
5. Recipe to minimize Te precipitation in CdTe and (Cd,Zn) Te crystals
6. Effect of annealing on near-stoichiometric and non-stoichiometric CdZnTe wafers
7. Growth and characterization of 100 mm diameter CdZnTe single crystals by the vertical gradient freezing method
8. Defects in CdTe bridgman monocrystals caused by non-stoichiometric growth conditions
9. Distribution and genesis of inclusions in CdTe and (Cd,Zn)Te single crystals grown by the bridgman method and by the traveling heater method
10. Characterization of CdTe, (Cd,Zn) Te and Cd(Te,Se) single crystals by transmission electron microscopy