CdZnTe substrate producibility and its impact on IRFPA yield

Journal of Electronic Materials

Volumn 28, Issue 6, 1999, Pages 718-725

  Sen, Sanghamitra ^a   Hettich, Herbert L ^a   Rhiger, David R ^a   Price, Stephen L ^a   Currie, Malcolm C ^a   Ginn, Robert P ^a   McLean, Eugene O ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; COOLING; INFRARED DETECTORS; MERCURY COMPOUNDS; PRESSURE EFFECTS; QUARTZ; SEMICONDUCTOR GROWTH; SUBSTRATES;

CADMIUM ZINC TELLURIDE; INFRARED FOCAL PLANE ARRAYS (IRFPA); MERCURY CADMIUM TELLURIDE; PYROLYTIC BORON NITRIDE;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0032630686     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0060-8     Document Type: Article

References (3)

1. S.L. Price, H.L. Hettich, S. Sen, M.C. Currie, D.R. Rhiger and E.O. McLean, J. Electron. Mater. 27, 564 (1998).
2. K. Nakagawa, K. Maeda and S. Takeuchi, Appl. Phys. Lett. 34, 574 (1979).
3. D.R. Rhiger, J.M. Peterson, R.M. Emerson, E.E. Gordon, S. Sen, Y. Chen and M. Dudley, J. Electron. Mater. 27, 615 (1998).