Spectroscopic evaluation of n-type CdZnTe gamma-ray spectrometers

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 691-698

  Nemirovsky, Y ^a   Asa, G ^a   Gorelik, J ^a   Peyser, A ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CROSSTALK; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; GAMMA RAY SPECTROMETERS; IMAGING TECHNIQUES; INDIUM; OHMIC CONTACTS; RADIATION DETECTORS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

BRIDGMAN METHOD; CADMIUM ZINC TELLURIDE;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033703240     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0207-0     Document Type: Article

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