Heteroepitaxial growth of InSb(111) on Si(111)

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 17-19

  Kitabatake, M ^a   Kawasaki, T ^b   Korechika, T ^b  

^a PANASONIC CORPORATION   (Japan)

^b Matsushita Electron Components C   (Japan)

Author keywords

Heteroepitaxial growth; InSb

Indexed keywords

DEPOSITION; ELECTRON TRANSPORT PROPERTIES; FILM GROWTH; INTERFACES (MATERIALS); REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SILICON WAFERS; SUBSTRATES; THIN FILMS;

ELECTRON MOBILITY; HETEROEPITAXIAL FILM; HETEROEPITAXIAL INTERFACE GROWTH; INDIUM ANTIMONIDE; KIKUCHI PATTERNS; KNUDSEN CELLS; TWO STEP GROWTH;

EPITAXIAL GROWTH;

EID: 0002643780     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08565-3     Document Type: Article

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