Comparison of second impact ionization phenomena between 0.18um N-and P-channel MOSFET's

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 140-143

  Bravaix, A ^a   Goguenheim, D ^a   Revil, N ^b   Vincent, E ^b  

^a Maison des Technologies   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISSIPATION; MOSFET DEVICES; SOLID STATE DEVICES;

EMISSION POINT; HOLE EMISSION; HOLE ENERGY; IONIZATION EVENTS; IONIZATION PROCESS; MOS-FET; P CHANNELS; PMOSFET'S;

IMPACT IONIZATION;

EID: 0342750580     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194734     Document Type: Conference Paper

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