Analysis of the hot-carrier degradation of deep-submicrometer large-angle-tilt-implanted drain (LATID) MOSFETs

Solid-State Electronics

Volumn 41, Issue 9, 1997, Pages 1293-1301

  Bravaix, A ^a   Vuillaume, D ^b  

^a Maison des Technologies   (France)

^b Institut Superieur de l'Electronique et du Numerique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRON ENERGY LEVELS; MOSFET DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

ELECTRON INJECTION; IMPLANTED DRAIN; OXIDE TRAPS;

HOT CARRIERS;

EID: 0031238136     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(97)00074-9     Document Type: Article

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