Raman spectroscopy of disorder effects in AlxGa1-xN solid solutions

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 222-225

  Davydov, Valery Y ^a   Goncharuk, Igor N ^a   Baidakova, Marina V ^a   Smirnov, Alexander N ^a   Subashiev, Arsen V ^b   Aderhold, Jochen ^c   Stemmer, Jens ^c   Rotter, Thomas ^c   Uffmann, Dirk ^c   Semchinova, Olga ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^c LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COMPOSITION; DENSITY (SPECIFIC GRAVITY); MOLECULAR BEAM EPITAXY; PHONONS; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; STRAIN; SUBSTRATES;

DISORDER AFFECTS; EPITAXIAL LAYERS; SPATIAL FLUCTUATIONS;

SOLID SOLUTIONS;

EID: 0033528939     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00370-5     Document Type: Article

References (8)

1. Cros A., Angerer H., Ambacher O., Stutzmann M., Hopler R., Metzger T. Solid State Commun. 104:1997;35.
2. Demangeot F., Groenen J., Frandon J. et al. MRS Int. J. Nitride Semicond. Res. 2:1997;40.
3. Bergman L., Bremser M.D., Perry W.G., Davis R.F., Dutta M., Nemanich R.J. Appl. Phys. Lett. 71:1997;2157.
4. Yoshida S., Misawa S., Gonda S. J. Appl. Phys. 53:1982;6844.
5. Davydov V.Y., Averkiev N.S., Goncharuk I.N. et al. J. Appl. Phys. 82:1997;5097.
6. A.L. Efros, M.E. Raikh, in: R.J. Elliott, I.P. Ipatova (Eds.), Optical Properties of Mixed Crystals, Elseiver Science, Amsterdam, 1988, p. 135.
7. Schubert E.F., Gobel E.O., Horikoshi Y., Ploog K., Queisser H.G. Phys. Rev. B. 30:1984;813.
8. Ipatova I.P., Shchukin V.A. JETPh. 97:1990;990.