Self-heating effects in red (665 nm) VCSELs

IEE Proceedings: Optoelectronics

Volumn 148, Issue 5-6, 2001, Pages 256-260

  Knowles, G ^a   Sweeney, S J ^a   Sale, T E ^a   Adams, A R ^a  

^a UNIVERSITÉ LAVAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRIC CURRENTS; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

CARRIER LEAKAGE; GAIN CAVITY DETUNING EFFECTS; GAIN SPECTRA; RADIATIVE CURRENT; SELF HEATING EFFECTS; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0035481391     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20010843     Document Type: Article

References (15)

1. Development of a red VCSEL-to-plastic fibre module for use in parallel optical data links
2. Evaluating the continuous-wave performance of AlGalnP-based red (667 nm) vertical-cavity surface-emitting lasers using low-temperature and high-pressure techniques
3. Influence of leakage and gain-cavity alignment on the performance of Al(Gal) visible vertical-cavity surface emitting lasers
4. Progress in the design and development of AlGalnP visible VCSELs
5. Thermal effects in AlGaAs/AlGalnP VCSELs
6. DBR mirror properties in real operating conduction of gain-guided VCSELs
7. Thermal properties of vertical cavity surface emitting laser diodes
8. Lattice thermal resistivity of III-V compound alloys
9. Quantifying the effect of indirect carrier leakage on visible Al(GalnP) lasers using high pressures and low temperature
10. Diode lasers and photonic integrated circuits
11. 1-z system materials to improve the performance of 850 nm surface- and edge-emitting lasers
12. Temperature dependence of the energy gap in GaAs and GaP
13. Temperature-dependence of the E0 + Δ0 gaps of InP up to 600°C
14. Temperature dependence of the energy gap in semiconductors