-
1
-
-
0141482616
-
High-reflectivity GaAs-AlGaAs mirrors: Sensitivity analysis with respect to epitaxial growth parameters
-
BAETS, R., DEMEESTER, P., and LAGASSE, P. E., 1987, High-reflectivity GaAs-AlGaAs mirrors: sensitivity analysis with respect to epitaxial growth parameters. J. Appl. Phys., 62, 723-729.
-
(1987)
J. Appl. Phys.
, vol.62
, pp. 723-729
-
-
Baets, R.1
Demeester, P.2
Lagasse, P.E.3
-
2
-
-
0024069478
-
Surface emitting semiconductor lasers
-
IGA, K., KOYAMA, F., and KINOSHITA, S., 1988, Surface emitting semiconductor lasers. IEEE J. Quantum Electron., 24, 1845-1855.
-
(1988)
IEEE J. Quantum Electron.
, vol.24
, pp. 1845-1855
-
-
Iga, K.1
Koyama, F.2
Kinoshita, S.3
-
3
-
-
0026173322
-
Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors
-
HASNAIN, G., TAI, K., YANG, L., WANG, Y. H., FISCHER, R. J., WYNN, J. D., WEIR, B., DUTTA, N. K., and CHO, A. Y., 1991, Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors. IEEE J. Quantum Electron., 27, 1377-1385.
-
(1991)
IEEE J. Quantum Electron.
, vol.27
, pp. 1377-1385
-
-
Hasnain, G.1
Tai, K.2
Yang, L.3
Wang, Y.H.4
Fischer, R.J.5
Wynn, J.D.6
Weir, B.7
Dutta, N.K.8
Cho, A.Y.9
-
4
-
-
0001875963
-
Efficient vertical-cavity lasers (invited paper)
-
COLDREN, L. A., GEELS, R. S., CORZINE, S. W., and SCOTT, J. W., 1992, Efficient vertical-cavity lasers (invited paper). Opt. & Quantum Electron., 24, S105-S119.
-
(1992)
Opt. & Quantum Electron.
, vol.24
-
-
Coldren, L.A.1
Geels, R.S.2
Corzine, S.W.3
Scott, J.W.4
-
5
-
-
0028723509
-
Advances in vertical cavity surface emitting lasers (invited paper)
-
MORGAN, R. A., 1994, Advances in vertical cavity surface emitting lasers (invited paper). Proc. SPIE, 2147, 97-119.
-
(1994)
Proc. SPIE
, vol.2147
, pp. 97-119
-
-
Morgan, R.A.1
-
6
-
-
3342964818
-
A new breed of diode lasers: Surface emitting lasers
-
HENINI, M., 1996, A new breed of diode lasers: surface emitting lasers. III-V Review, 9, 37-41.
-
(1996)
III-V Review
, vol.9
, pp. 37-41
-
-
Henini, M.1
-
7
-
-
0030125859
-
Thermal aspects of efficient operation of vertical-cavity surface-emitting lasers
-
NAKWASKI, W., 1996, Thermal aspects of efficient operation of vertical-cavity surface-emitting lasers. Opt. & Quantum Electron., 28, 335-352.
-
(1996)
Opt. & Quantum Electron.
, vol.28
, pp. 335-352
-
-
Nakwaski, W.1
-
8
-
-
0026818393
-
Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors
-
BABIC, D. I., and CORZINE, S. W., 1992, Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors. IEEE J. Quantum Electron., 28, 514-524.
-
(1992)
IEEE J. Quantum Electron.
, vol.28
, pp. 514-524
-
-
Babic, D.I.1
Corzine, S.W.2
-
9
-
-
36549098686
-
Precision AlGaAs Bragg reflectors fabricated by phase-locked epitaxy
-
WALKER, J. D., MALLOY, K., WANG, S., and SMITH, J. S., 1990, Precision AlGaAs Bragg reflectors fabricated by phase-locked epitaxy. Appl. Phys. Lett., 56, 2493-2495.
-
(1990)
Appl. Phys. Lett.
, vol.56
, pp. 2493-2495
-
-
Walker, J.D.1
Malloy, K.2
Wang, S.3
Smith, J.S.4
-
10
-
-
0029218430
-
Effects of carrier diffusion on thermal properties of proton-implanted top-surface-emitting lasers (invited paper)
-
SARZAŁA, R. P., NAKWASKI, W., and OSIŃSKI, M., 1995, Effects of carrier diffusion on thermal properties of proton-implanted top-surface-emitting lasers (invited paper). Proc. SPIE, 2399, 583-604.
-
(1995)
Proc. SPIE
, vol.2399
, pp. 583-604
-
-
Sarzała, R.P.1
Nakwaski, W.2
Osiński, M.3
-
11
-
-
0029362461
-
Comprehensive thermal-electrical self-consistent model of proton-implanted top-surface-emitting lasers
-
SARZAŁA, R. P., NAKWASKI, W., and OSIŃSKI, M., 1995, Comprehensive thermal-electrical self-consistent model of proton-implanted top-surface-emitting lasers. Int. J. Optoelectron., 10, 357-371.
-
(1995)
Int. J. Optoelectron.
, vol.10
, pp. 357-371
-
-
Sarzała, R.P.1
Nakwaski, W.2
Osiński, M.3
-
12
-
-
0026189273
-
Low series resistance high-efficiency GaAs/AlGaAs vertical-cavity surface-emitting lasers with continuously graded mirrors grown by MOCVD
-
ZHOU, P., CHENG, J., SCHAUS, C. F., SUN, S. Z., ZHENG, K., ARMOUR, E., HAINS, C., HSIN, W., MYERS, D. R., and VAWTER, G. A., 1991, Low series resistance high-efficiency GaAs/AlGaAs vertical-cavity surface-emitting lasers with continuously graded mirrors grown by MOCVD. IEEE Photon. Technol. Lett., 3, 591-593.
-
(1991)
IEEE Photon. Technol. Lett.
, vol.3
, pp. 591-593
-
-
Zhou, P.1
Cheng, J.2
Schaus, C.F.3
Sun, S.Z.4
Zheng, K.5
Armour, E.6
Hains, C.7
Hsin, W.8
Myers, D.R.9
Vawter, G.A.10
-
13
-
-
3342890149
-
Analysis of current spreading and series resistance in GaAs/AlGaAs proton-implanted top-surface-emitting lasers
-
OSIŃSKI, M., NAKWASKI, W., and VARANGIS, P., 1994, Analysis of current spreading and series resistance in GaAs/AlGaAs proton-implanted top-surface-emitting lasers. Proc. SPIE, 2146, 388-396.
-
(1994)
Proc. SPIE
, vol.2146
, pp. 388-396
-
-
Osiński, M.1
Nakwaski, W.2
Varangis, P.3
-
14
-
-
0029352189
-
Current spreading and series resistance of proton-implanted vertical-cavity top-surface-emitting lasers
-
NAKWASKI, W., 1995, Current spreading and series resistance of proton-implanted vertical-cavity top-surface-emitting lasers. Appl. Phys. A, 61, 123-127.
-
(1995)
Appl. Phys. A
, vol.61
, pp. 123-127
-
-
Nakwaski, W.1
-
15
-
-
33646424593
-
1-xAs: Material parameters for use in research and device applications
-
1-xAs: material parameters for use in research and device applications. J. Appl. Phys., 58, R1-R29.
-
(1985)
J. Appl. Phys.
, vol.58
-
-
Adachi, S.1
-
16
-
-
0042205770
-
Thermal expansion of gallium arsenide layers grown by molecular beam epitaxy at low temperatures
-
LESZCZYŃSKI, M., and WALKER, J. F., 1993, Thermal expansion of gallium arsenide layers grown by molecular beam epitaxy at low temperatures. Appl. Phys. Lett., 62, 1484-1486.
-
(1993)
Appl. Phys. Lett.
, vol.62
, pp. 1484-1486
-
-
Leszczyński, M.1
Walker, J.F.2
-
17
-
-
0011191643
-
Thermal expansion of AlAs
-
ETTENBERG, M., and PFAFF, R. J., 1970, Thermal expansion of AlAs. J. Appl. Phys., 41, 3926-3927.
-
(1970)
J. Appl. Phys.
, vol.41
, pp. 3926-3927
-
-
Ettenberg, M.1
Pfaff, R.J.2
-
18
-
-
21544435781
-
Refractive index of GaAs
-
MARPLE, D. T. F., 1964, Refractive index of GaAs. J. Appl. Phys., 35, 1241-1242.
-
(1964)
J. Appl. Phys.
, vol.35
, pp. 1241-1242
-
-
Marple, D.T.F.1
-
19
-
-
0003828665
-
-
New York: Academic Press
-
CASEY, H. C. JR., and PANISH, M. B., 1978, Heterostructure Lasers, Part A: Fundamental Principles (New York: Academic Press), p. 45.
-
(1978)
Heterostructure Lasers, Part A: Fundamental Principles
, pp. 45
-
-
Casey Jr., H.C.1
Panish, M.B.2
-
20
-
-
0001756632
-
Temperature and pressure dependences of the dielectric constants of semiconductors
-
SAMARA, G. A., 1983, Temperature and pressure dependences of the dielectric constants of semiconductors. Phys. Rev. B, 27, 3494-3505.
-
(1983)
Phys. Rev. B
, vol.27
, pp. 3494-3505
-
-
Samara, G.A.1
-
21
-
-
0020828962
-
The carrier-induced index change in AlGaAs and 1.3 μm InGaAsP diode lasers
-
MANNING, J., OLSHANSKY, R., and SU, C. B., 1983, The carrier-induced index change in AlGaAs and 1.3 μm InGaAsP diode lasers. IEEE J. Quantum Electron., 19, 1525-1530.
-
(1983)
IEEE J. Quantum Electron.
, vol.19
, pp. 1525-1530
-
-
Manning, J.1
Olshansky, R.2
Su, C.B.3
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