Thermal effects in AlGaAs/AlGalnP VCSELs

IEE Proceedings: Optoelectronics

Volumn 147, Issue 1, 2000, Pages 11-14

  Pinches, S M ^a   Frost, J E F ^a   Martin, P M ^a   Sale, T E ^b   Robson, P N ^a   Woodhead, J ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; PULSED LASER APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

ALUMINUM GALLIUM ARSENIDE; ALUMINUM GALLIUM INDIUM PHOSPHIDE; VERTICAL-CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0033885310     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20000243     Document Type: Article

References (7)

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2. SCHNIEDER, R.P., CHOQUETTE, K.D., LOTT, J.A., LEAR, K.L., FIGIEL, J.J., and MALLOY, K.J.: 'Efficient room-temperature continuous-wave AlGalnP/AlGaAs visible (670 nm) vertical-cavity surface-emitting laser diodes', IEEE Photonics Technol. Lett., 1994, 6, pp. 313-315
3. CHOQUETTE, K.D., SCHNEIDER, R.P., CRAWFORD, M.H., GEIB, K.M., and FIGIEL, J.J.: 'Continuous wave operation of 640 to 660 nm selectively oxidised AlGalnP vertical-cavity surface emitting lasers', Electron. Lett., 1995, 31, pp. 1145-6
4. PINCHES, S.M., ONISHENKO, A., SALE, T.E., and WOODHEAD, J.: 'Free carrier absorption in red VCSELs'. IEEE Conference on Lasers and Electro-Optics, 1999, San Francisco, Technical Digest, 794-795
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6. NAKWASKI, W., and OSINSKI, M.: 'Thermal properties of vertical cavity surface emitting semiconductor laser diodes', Prog. Opt., 1998, 38, pp. 165-262
7. YEH, H.J., and SMITH, J.S.: 'Integration of GaAs vertical cavity surface emitting laser on Si by substrate removal', Appl. Phys. Lett., 1994, 64, pp. 1466-1468