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Volumn 148, Issue 1, 2001, Pages 55-59

Influence of leakage and gain-cavity alignment on the performance of Al(GaInP) visible vertical-cavity surface emitting lasers

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; LASER TUNING; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

EID: 0035247007     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20010192     Document Type: Article
Times cited : (17)

References (11)
  • 1
    • 0031271414 scopus 로고    scopus 로고
    • The semiconductor laser: A thirty-five-year perspective
    • (1997) Proc. IEEE , vol.85 , Issue.11 , pp. 1678-1693
    • Holonyak N., Jr.1
  • 11
    • 0141463546 scopus 로고    scopus 로고
    • Semiconductor optoeletronic devices, High pressure in semiconductor physics II, Semiconctors and semimetals?
    • Academic Press, London
    • (1998) , vol.55
    • Adams, A.R.1    Silver, M.2    Allam, J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.