Measurement of the in-depth stress profile in hydrogenated microcrystalline silicon thin films using Raman spectrometry

Journal of Applied Physics

Volumn 90, Issue 7, 2001, Pages 3276-3279

  Paillard, V ^a   Puech, P ^a   Sirvin, R ^a   Hamma, S ^b   Roca I Cabarrocas, P ^b  

^a CNRS   (France)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035477635     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1396828     Document Type: Article

References (17)

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