Exploiting CMOS reverse interconnect scaling in multigigahertz amplifier and oscillator design

IEEE Journal of Solid-State Circuits

Volumn 36, Issue 10, 2001, Pages 1480-1488

  Kleveland, Bendik ^b,c   Diaz, Carlos H ^a,d   Vook, Dieter ^a,e   Madden, Liam ^f   Lee, Thomas H ^a,b   Wong, S Simon ^b  

^a IEEE   (Taiwan)

^b STANFORD UNIVERSITY   (United States)

^c Matrix Semiconductor   (United States)

^d TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^e AGILENT LABORATORIES   (United States)

^f MIPS Technologies Inc   (United States)

Author keywords

CMOS integrated circuits; Interconnections; Microwave integrated circuits; Oscillators; Transmission lines; Travelling wave amplifiers

Indexed keywords

TRAVELING WAVE AMPLIFIERS;

DIGITAL INTEGRATED CIRCUITS; DOPING (ADDITIVES); ELECTRIC LINES; MICROWAVE AMPLIFIERS; SEMICONDUCTING SILICON; SUBSTRATES;

CMOS INTEGRATED CIRCUITS;

EID: 0035473443     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.953476     Document Type: Article

References (49)

1. Interconnect scaling - The real limiter to high performance ULSI
2. A 115-mW 0.5-μm CMOS GPS receiver with wide dynamic-range active filters
3. A 1.9-GHz wide-band IF double conversion CMOS receiver for cordless telephone applications
4. S-parameter based IC interconnect transmission line characterization
5. 2 system
6. High-speed VLSi interconnect modelling based on S-parameter measurements
7. Monolithic planar RF inductor and waveguide structures on silicon with performance comparable to those in GaAs MMIC
8. Simple modelling of coplanar waveguide on thick dielectric over lossy substrate
9. Air-gap transmission lines for OEICs and MMIC using glass substrates
10. A millimeter-wave flip-chip IC using micro bump bonding technology
11. 26-GHz coplanar SiGe MMICs
12. Spiral inductors and transmission lines in silicon technology using copper-damascene interconnects and low-loss substrates
13. Extended study of crosstalk in SOI-SIMOX substrates
14. Improved CMOS device performance through Si epitaxial intrinsic gettering techniques
15. The effect of the crystal grown-in defect on the pause tail characteristics of megabit dynamic random access memory devices
16. Integration of high-Q inductors in a latch-up resistant CMOS technology
17. A high-performance 0.25-μm logic technology optimized for 1.8-V operation
18. A high-performance 1.8-V 0.20-μm CMOS technology with copper metallization
19. Full copper wiring in a sub-μm CMOS ULSI technology
20. Interconnects for ULSI: State of the art and future trends
21. RF circuit design aspects of spiral inductors on silicon
22. 50-GHz interconnect design in standard silicon technology
23. Analytical formulas for coplanar lines in hybrid and monolithic mics
24. Parameters of coplanar waveguides with lower ground plane
25. Extension of the application of conformal mapping techniques to coplanar lines with finite dimensions
26. Broadband characterization of conductor-backed coplanar waveguide using accurate on-wafer measurement techniques
27. Characterization of MIS structure coplanar transmission lines for investigation of signal propagation in integrated circuits
28. Design considerations for monolithic microwave circuits
29. Monolithic microwave integrated circuits - The next generation of microwave components
30. Distributed ESD protection device for high-speed integrated circuits
31. Distributed amplification
32. A DC-12 GHZ monolithic GaAs FET distributed amplifier
33. A 1-157-GHz InP HEMT travelling-wave amplifier
34. Distributed mosfet amplifier using microstrip
35. An integrated CMOS distributed amplifier utilizing packaging inductance
36. Silicon-on-sapphire MOSFET distributed amplifier with coplanar waveguide matching
37. Fully-integrated CMOS RF amplifiers
38. Monolithic CMOS distributed amplifier and oscillator
39. Experimental verification of a distributed amplifier oscillator
40. A general theory of phase noise in electrical oscillators
41. A 1.8-GHz CMOS voltage-controlled oscillator
42. A 900-MHz frequency synthesizer with integrated LC voltage-controlled oscillator
43. A 3.5-mW 2.5-GHz diversity receiver and a 1.2-mW 3.6-GHz VCO in silicon-on-anything
44. CMOS 1.8-GHz low-phase-noise voltage-controlled oscillator with prescaler
45. A 1.4-GHz 3-mW CMOS LC low phase noise VCO using tapped bond wire inductances