A SOI LDMOS technology compatible with CMOS, BJT, and passive components for fully-integrated RF power amplifiers

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2428-2433

  Tan, Yue ^a,b   Kumar, Mahender ^a,b   Cai, Jun ^b   Sin, Johnny K O ^a,b  

^a IEEE   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Bipolar junction transistor (BJT); Complementary metal oxide semiconductor (CMOS); Lateral double diffused MOS transistors (LDMOS); Passive components; Radio frequency (RF) power amplifier; Silicon on insulator (SOI)

Indexed keywords

BIPOLAR JUNCTION TRANSISTORS; LATERAL DOUBLE-DIFFUSED MOS TRANSISTORS; RADIO FREQUENCY POWER AMPLIFIER; SOFTWARE PACKAGE TSUPREM;

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; MOSFET DEVICES; POWER AMPLIFIERS; THRESHOLD VOLTAGE; TRANSCEIVERS; WIRELESS TELECOMMUNICATION SYSTEMS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0035471817     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954488     Document Type: Article

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