A LDMOS technology compatible with CMOS and passive components for integrated RF power amplifiers

IEEE Electron Device Letters

Volumn 21, Issue 2, 2000, Pages 82-84

  Tan, Yue ^a   Kumar, Mahender ^a   Sin, Johnny K O ^a   Cai, Jun ^a   Lau, Jack ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC INDUCTORS; GATES (TRANSISTOR); MOSFET DEVICES; NETWORK COMPONENTS; POWER AMPLIFIERS; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE; TRANSCEIVERS; WIRELESS TELECOMMUNICATION SYSTEMS;

INTEGRATED POWER AMPLIFIERS; LATERAL DOUBLE DIFFUSED MOS TECHNOLOGY; RADIOFREQUENCY TRANSCEIVER;

INTEGRATED CIRCUIT LAYOUT;

EID: 0034141004     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.821677     Document Type: Article

References (5)

1. P. R. Gray and R. G. Meyer, "Future directions in silicon IC's for rf personal communications," in Proc. IEEE Custom IC Conf., 1995, pp. 83-90.
2. A. Rofougaran et al., "A single-chip 900-MHz spread-spectrum wireless transceiver in a 1-μm CMOS, part I and II," IEEE J. Solid-State Circuits, vol. 33, pp. 515-547, Apr. 1998.
3. A. Wood, C. Dragon, and W. Burger, "High performance silicon LDMOS technology for 2 GHz rf power amplifier applications," in IEEE IEDM Tech. Dig., 1996, pp. 87-90.
4. T. Efland et al., "A performance comparison between new reduced surface drain 'RSD' LDMOS and RESURF and conventional planar power devices rated at 20-V," in IEEE Int. Symp. Power Semiconductor Devices and ICs, 1997, pp. 185-188.
5. H. Ronkainen et al., "IC compatible planar inductors on silicon," in Proc. Inst. Elect. Eng., Circuits Devices Syst., vol. 144, Feb. 1997, pp. 29-35.