Local lifetime control IGBT structures: Turn-off performances comparison for hard- and soft-switching between 1200V trench and new planar PT-IGBTs

Microelectronics Reliability

Volumn 41, Issue 9-10, 2001, Pages 1731-1736

  Azzopardi, S ^a   Kawamura, A ^b   Iwamoto, H ^c   Briat, O ^a   Vinassa, J M ^a   Woirgard, E ^a   Zardini, C ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b YOKOHAMA NATIONAL UNIVERSITY   (Japan)

^c MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC LOSSES; ELECTRON IRRADIATION; HIGH TEMPERATURE EFFECTS; INSULATED GATE BIPOLAR TRANSISTORS; PROTON IRRADIATION; SWITCHING; WAVEFORM ANALYSIS;

SOFT SWITCHING; SWITCHING LOSSES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0035457088     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00212-8     Document Type: Article

References (8)

1. A. Elasser, M.J. Schütten, V. Vlatkovic, D.A. Torry "Switching Losses of IGBTs under Zero-Voltage and Zero-Current Switching", Proc. of IEEE PESC 1996, pp.600-607.
2. S. Azzopardi, C. Jamet, J.M Vinassa, C. Zardini, "Switching Performances Comparison of 1200V Punch-Through and Non Punch-Through IGBTs under Hard-Switching at High Temperature", Proc. of IEEE PESC 1998, Fukuoka (Japan), pp. 1201-1207.
3. B.J. Baliga, "Power Semiconductor Devices", PWS Publishing Company, Boston, USA, 1996.
4. Iwamoto, H. Haruguchi, Y. Tomomatsu, J.F Donlon, E. R. Motto, "A New Punch-Through IGBT Having a New N-Buffer Layer", Proc. of IEEE IAS 1999, pp.692-699.
5. E.R. Motto, J.F. Donlon, H. Takahashi, M. Tabata, H. Iwamoto "Characteristics of a 1200V PT IGBT with Trench Gate and Local Life Time Control", Proc. of IEEE IAS 1998, pp.811-816.
6. M. Harada, T. Minato, H. Takahashi, H. Nishihara, K. Inoue, I. Takata, "600V Trench IGBT in Comparison with Planar IGBT - An Evaluation of the Limits of IGBT Performance", Proc. of IEEE ISPSD 1994, pp.411-416.
7. S. Azzopardi, A. Kawamura, H. Iwamoto "Switching Performances of 1200V Conventional Planar and Trench Punch-Through IGBTs for Clamped Inductive Load under Extensive Measurements", Proc. of IPEMC 2000, Beijing (China), vol.1, pp.64-69.
8. S. Azzopardi, A. Kawamura, H. Iwamoto "Experimental Investigations on the Switching Performances of 1200V Conventional PT-IGBT and New PT-IGBT Using Local Lifetime Control for Clamped Inductive Load without Freewheeling Diode Reverse Recovery Effect", Proc. of EPE-PEMC 2000, Kosice (Slovak Republic), vol.3, pp.227-233.