Switching losses of IGBTs under zero-voltage and zero-current switching

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 1, Issue , 1996, Pages 600-607

  Elasser, Ahmed ^a   Schutten, Michael J ^a   Vlatkovic, Vlatko ^a   Torrey, David A ^a   Kheraluwala, Mustansir H ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC INDUCTORS; ELECTRIC LOSSES; ELECTRIC SWITCHES; SEMICONDUCTOR DEVICE STRUCTURES; SWITCHING;

SNUBBER CAPACITORS; SWITCHING LOSSES; ZERO CURRENT SWITCHING; ZERO VOLTAGE SWITCHING;

BIPOLAR TRANSISTORS;

EID: 0029765353     PISSN: 02759306     EISSN: None     Source Type: None    
DOI: 10.1109/PESC.1996.548642     Document Type: Conference Paper

References (6)

1. K. Chen T. A. Stuart A 1.5kW, 200kHz dc-dc converter optimized for IGBTs HFPC Conf. Proc 265 274 HFPC Conf. Proc 1991
2. G. Miller J. Sack A new concept for a non punch-through IGBT with MOSFET like switching characteristics IEEE PESC Conf. Proc. 21 25 IEEE PESC Conf. Proc. 1989
3. K. Wang F. C. Lee G. Hua D. Borojevic A comparative study of switching losses of IGBTs under hard-switching, zero-voltage switching and zero-current switching IEEE PESC Conf. Proc. 1196 1204 IEEE PESC Conf. Proc. 1994
4. F. Blaabjerg U. Jaeger S. Munk-Nielson J. K. Pederson Power losses in PWM-VSI inverter using NPT or PT IGBT devices IEEE Transactions on Power Electronics 10 3 358 367 1995
5. A. Elasser V. Parthasarathy D. A. Torrey Study of the internal device dynamics of punch-through and non punch-through IGBTs under zero-current switching APEC Conf. Proc. Record 250 257 APEC Conf. Proc. Record 1996
6. B. J. Baliga Power Semiconductor Devices 1995 PWS Publishing Company MA, Boston