Changing the size and shape of Ge island by chemical etching

Journal of Crystal Growth

Volumn 231, Issue 1-2, 2001, Pages 17-21

  Gao, F ^a   Huang, C J ^a   Huang, D D ^a   Li, J P ^a   Sun, D Z ^a   Kong, M Y ^a   Zeng, Y P ^a   Li, J M ^a   Lin, L Y ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Atomic force microscopy; A1. Etching; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting germanium; B2. Semiconducting silicon

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; LUMINESCENCE OF SOLIDS; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SUBSTRATES;

CHEMICAL ETCHING;

MOLECULAR BEAM EPITAXY;

EID: 0035452372     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01357-4     Document Type: Article

References (15)