Improvement of GaN epitaxial layer quality by the design of reactor chamber spacing

Journal of Crystal Growth

Volumn 200, Issue 1-2, 1999, Pages 32-38

  Yang, Chien Cheng ^a,c   Chi, Gou Chung ^b   Huang, Chuag Kuei ^c   Wu, Meng Chyi ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; GASES; HEAT CONVECTION; HYDROGEN; LAMINAR FLOW; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACES;

EPITAXIAL LAYERS; HALL MOBILITY; MIRROR LIKE SURFACE; QUARTZ CHAMBER; REACTOR CHAMBER SPACING;

SEMICONDUCTING FILMS;

EID: 0033115769     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01259-7     Document Type: Article

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