Ion-channeling studies of cubic GaN and InxGa1-xN on GaAs substrates

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 155, Issue 4, 1999, Pages 489-497

  Portmann, J ^a   Haug, C ^a   Brenn, R ^a   Frey, T ^b   Schottker B ^b   As, D J ^b  

^a UNIVERSITY OF FREIBURG   (Germany)

^b UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); GALLIUM COMPOUNDS; HELIUM; INDIUM ALLOYS; MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE;

GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; ION CHANNELING;

ION BOMBARDMENT;

EID: 0033312429     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00472-3     Document Type: Article

References (21)

1. Nakamura S., Senoh M., Iwasa N., Nagahama S. Appl. Phys. Lett. 67:1995;1868.
2. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T. Jpn. J. Appl. Phys. 35:1996;L74.
3. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Sugimoto Y., Kiyoku H. Appl. Phys. Lett. 70:1997;1417.
4. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y., Kozaki T., Umemoto H., Sano M., Chocho K. Appl. Phys. Lett. 72:1998;4056.
5. Yang H., Brandt O., Trampert A., Ploog K.H. Appl. Surf. Sci. 104/105:1996;461.
6. Schikora D., Hankeln M., As D.J., Lischka K., Litz T., Waag A., Buhrow T., Henneberger F. Phys. Rev. B. 54:1996;R8381.
7. Schöttker B., Kühler J., As D.J., Schikora D., Lischka K. Material Sci. Forum. 264-268:1998;1173.
8. Blood P., Feldman L.C., Miller G.L., Remeika J.P. Nucl. Instr. and Meth. 149:1978;225.
9. RUMP (program), Computer Graphic Service, 52 Genung Circle, Ithaca, NY 14850-2042, USA.
10. Ishiwara H., Furukawa S. J. Appl. Phys. 47:1976;1686.
11. Feldman L.C., Mayer J.W., Picraux S.T. Materials Analysis by Ion Channeling. 1982;Academic Press, New York.
12. Lindhard J. Mat.-Fys. Medd.: K. Dan. Vidensk. Selsk. 34:1965;14.
13. Barrett J.H. Phys. Rev. B. 3:1971;1527.
14. Lanford W.A. Nucl. Instr. and Meth. 149:1978;1.
15. Gemmell D.S. Rev. Mod. Phys. 46:1974;129.
16. J.H. Edgar, Properties of Group III Nitrides, INSPEC, London,1994.
17. Lischka K. Phys. Stat. Sol. (B). 202:1997;673.
18. Brandt O., Yang H., Tampert A., Ploog K.H. MRS Symp. Proc. 395:1996;27.
19. Ayers J. J. Appl. Phys. 78:1995;3724.
20. Tesmer J.R., Nastasi M. Handbook of Modern Ion Beam Materials Analysis. 1995;Materials Research Society, Pittsburgh.
21. Swanson M.L. Rep. Prog. Phys. 45:1982;47.