Micromachined silicon suspended wires with submicrometric dimensions

Microelectronic Engineering

Volumn 57-58, Issue , 2001, Pages 959-965

  Bruschi, P ^a   Diligenti, A ^a   Piotto, M ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

Micromachining; Nanostructures; Silicon wire; SOI

Indexed keywords

ETCHING; FABRICATION; LITHOGRAPHY; MICROMACHINING; NANOSTRUCTURED MATERIALS; OXIDATION; SILICON; SUBSTRATES;

SILICON WIRES;

WIRE;

EID: 0035450022     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00477-4     Document Type: Article

References (11)

1. Photoluminescence properties of silicon quantum-well layers
2. Optical properties of porous silicon: A first-principles study
3. Self-limiting oxidation for fabricating sub-5 nm silicon nanowires
4. Fabrication of thin silicon wires by anisotropic wet etching of SOI structures
5. Sub-10-nm Si lines fabricated using shifted mask patterns controlled with electron beam lithography and KOH anisotropic etching
6. Fabrication of free-standing single-crystal silicon wires
7. Fabrication of a silicon quantum wire surrounded by silicon dioxide and its transport properties
8. Fabrication of planar silicon nanowires on silicon-on-insulator using stress limited oxidation
9. Electrical characteristics of air-bridge-structured silicon nanowire fabricated by micromachining a silicon-on-insulator substrate
10. Free-standing silicon micromachined resistors from (110) substrate