Sub-10-nm si lines fabricated using shifted mask patterns controlled with electron beam lithography and KOH anisotropic etching

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers

Volumn 35, Issue 12 B, 1996, Pages 6347-6695

  Kurihara, Kenji ^a   Namatsu, Hideo ^a   Nagase, Masao ^a   Makino, Takahiro ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON CYCLOTRON RESONANCE; ETCHING; MASKS; OXIDATION; SEMICONDUCTING SILICON; SUBSTRATES;

ANISOTROPIC ETCHING; PLASMA OXIDATION; SHIFTED MASK PATTERN;

NANOTECHNOLOGY;

EID: 0030420172     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Review

References (14)