Difference between GaN films grown on two opposite oriented c-Al2O3 substrates

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 22, Issue 8, 2001, Pages 1030-1034

  Han, Pei De ^a   Duan, Xiao Feng ^a   Sun, Jia Long ^a   Zhang, Ze ^a   Wang, Zhan Guo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

GaN; Microcosmic structure; MOVPE; Polarity

Indexed keywords

ALUMINUM COMPOUNDS; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY;

BUFFER LAYER; MICROCOSMIC STRUCTURE;

THIN FILMS;

EID: 0035436280     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. MRS Internet