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Volumn , Issue , 1996, Pages 1-6
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Porous silicon - a new material for MEMS
a
a
SIEMENS AG
(Germany)
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Author keywords
[No Author keywords available]
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Indexed keywords
ASPECT RATIO;
CAPACITORS;
CURRENT DENSITY;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRODES;
ELECTROLYTES;
ETCHING;
FABRICATION;
HYDROFLUORIC ACID;
SILICON WAFERS;
SUBSTRATES;
ANODIZATION;
DOT PATTERN;
ELECTROCHEMICAL ETCHING;
QUANTUM SIZE EFFECTS;
SPACE CHARGE EFFECTS;
POROUS SILICON;
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EID: 0029753175
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (40)
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References (6)
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