Monolithic microwave AlGaAs/InGaAs doped-channel fet switches

Microwave and Optical Technology Letters

Volumn 13, Issue 1, 1996, Pages 47-49

  Ke, L W ^a   Chan, Y J ^a   Chiang, Y C ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

FET switches; MESFETs; Monolithic integrated circuits

Indexed keywords

FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; MESFET DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SWITCHES;

DOPED CHANNEL FIELD EFFECT TRANSISTORS SWITCHES; GATE WIDTH; MONOLITHIC MICROWAVE FRONT END SWITCH;

MICROWAVE DEVICES;

EID: 0030241122     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1098-2760(199609)13:1<47::AID-MOP16>3.0.CO;2-2     Document Type: Article

References (8)

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