A resonant-type GaAs switch IC with low distortion characteristics for 1.9 GHz PHS

IEICE Transactions on Electronics

Volumn E80-C, Issue 6, 1997, Pages 788-792

  Kameyama, Atsushi ^a   Kawakyu, Katsue K ^a   Ikeda, Yoshiko ^a   Nagaoka, Masami ^a   Ishida, Kenji ^a   Nitta, Tomohiro ^a   Yoshimura, Misao ^a   Kitaura, Yoshiaki ^a   Uchitomi, Naotaka ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

GaAs MESFET; MMIC; Personal handy phone system; Resonator; Single power supply operation; SPDT switch IC

Indexed keywords

CAPACITORS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC LOSSES; ELECTRIC RESISTANCE; INTEGRATED CIRCUIT LAYOUT; MESFET DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PERSONAL COMMUNICATION SYSTEMS; RESONANT CIRCUITS; RESONATORS; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL DISTORTION;

PERSONAL HANDY PHONE SYSTEMS (PHS); SINGLE POLE DOUBLE THROW (SPDT) SWITCHES;

SEMICONDUCTOR SWITCHES;

EID: 0031167012     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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