Electrical properties of Mg/La, Mg/Nb co-doped (Ba0.7Sr0.3)TiO3 thin films prepared by metallo-organic deposition method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 8, 2001, Pages 4974-4978

  Chen, San Yuan ^a   Wang, Hong Wen ^b   Huang, Li Chi ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

Author keywords

BST thin films; Electrical properties; Leakage current; Mg La codoped; Mg Nb codoped

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; DOPING (ADDITIVES); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

DIPOLE DEFECTS;

THIN FILMS;

EID: 0035414716     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.4974     Document Type: Article

References (17)