SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 796-800

Thermal stability of Ge channel modulation doped structures

(4) Irisawa, T a Ueno, T a Miura, H a Shiraki, Y a

a UNIVERSITY OF TOKYO (Japan)

Author keywords

A1. Diffusion; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Germanium silicon alloys

Indexed keywords

ANNEALING; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; STRAIN; THERMODYNAMIC STABILITY;

CHANNEL MODULATION DOPED STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035399360 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00863-6 Document Type: Conference Paper

Times cited : (6)

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