Characterization of In0.5Ga0.5As quantum dot p-i-n structures with different matrices

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 1168-1171

  Yeh, Nien Tze ^a   Nee, Tzer En ^a   Chyi, Jen Inn ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; HETEROJUNCTIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SPECTROSCOPIC ANALYSIS;

CARRIER TUNNELING-RECOMBINATION PROCESS;

MOLECULAR BEAM EPITAXY;

EID: 0032639424     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00013-5     Document Type: Article

References (16)

1. Leonard D., Krishnamurthy M., Reeves C.M., Denbaars S.P., Petroff P.M. Appl. Phys. Lett. 63:1993;3203.
2. Mukai K., Ohtsuka N., Sugawara M., Yamazaki S. Japan J. Appl. Phys. 33:1994;L1710.
3. Ledentsov N.N., Grundmann M., Kirstaedter N., Schmidt O., Heitz R., Bohrer J., Bimberg D., Ustinov V.M., Shchukin V.A., Egorov A.Yu., Zhukov A.E., Zaitsev S., Kop'ev P.S., Alferov Zh.I., Ruvimov S.S., Kosogov A.O., Werner P., Gosele U., Heydenreich J. Solid State Electron. 40:1996;785.
4. Chyi J.-I., Nee T.-E., Lee C.-T., Shieh J.-L., Pan J.-W. J. Crystal Growth. 175/176:1997;777.
5. Arakawa Y., Sakaki H. Appl. Phys. Lett. 40:1982;39.
6. Asada M., Miyamotoand Y., Suematsu Y. IEEE J. Quantum Electron. QE-22:1986;1915.
7. Kirstaedter N., Ledentsov N.N., Grudmann M., Bimberg D., Ustinov V.M., Ruvimov S.S., Maximov M.V., Kop'ev P.S., Alferov Zh.I., Richter U., Werner P., Gosele U., Heydenreich J. Electron. Lett. 30:1994;1416.
8. Shoji H., Nakata Y., Mukai K., Sugiyama Y., Sugawara M., Yokoyama N., Ishikawa H. Electron. Lett. 32:1996;2023.
9. T.-E. Nee, N.-T. Yeh, J.-I. Chyi, C.-T. Lee, in: Proc. Int. Symp. Formation, Physics and Device Application of Quantum Dot Structures, Sapporo, 1998.
10. Zhukov A.E., Egorov A.Yu., Kovsh A.R., Ustinov V.M., Ledentsov N.N., Maksimov M.V., Tsatsul'nikov A.F., Zaitsev S.V., Yu N., Gordeev Y., Kop'ev P.S., Alferov Z.I., Bimberg D. Semiconductors. 31:1997;411.
11. Nee T.-E., Yeh N.-T., Chyi J.-I., Lee C.-T. Solid-State Electron. 42:1998;1331.
12. Grundmann M., Bimberg D. Phys. Rev. B. 55:1997;9740.
13. Mukai K., Ohtsuka N., Shoji H., Sugawara M. Phys. Rev. B. 54:1996;R5243.
14. W.-H. Chang, T.-M. Hsu, K.-F. Tsai, T.-E. Nee, J.-I. Chyi, N.-T. Yeh, in: Proc. Int. Symp. on Formation, Physics and Device Application of Quantum Dot Structures, Sapporo, 1998.
15. R.H. Bube, Photoelectronic Properties of Semiconductors, Cambridge University Press, New York, 1992, p. 258.
16. Nakano T., Nakagawa T., Yoh K. Japan J. Appl. Phys. 36:1997;4283.