Formation of self-organized In0.5Ga0.5As quantum dots on GaAs by molecular beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 777-781

  Chyi, Jen Inn ^a   Nee, Tzer En ^a   Lee, Ching Ting ^a   Shieh, Jia Lin ^a   Pan, Jen Wei ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Molecular beam epitaxy; Quantum dots; Step bunching

Indexed keywords

DENSITY (SPECIFIC GRAVITY); MOLECULAR BEAM EPITAXY; NUCLEATION; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; SURFACE STRUCTURE;

SELF ORGANIZED QUANTUM DOTS; STEP BUNCHING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031141844     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01034-2     Document Type: Article

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