High characteristic temperature Be-doped In0.5Ga0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 905-908

  Nee, Tzer En ^a   Yeh, Nien Tze ^a   Lee, Jia Ming ^a   Chyi, Jen Inn ^a   Lee, Ching Ting ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; HIGH TEMPERATURE PROPERTIES; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

QUANTUM DOT LASERS; THRESHOLD CURRENT DENSITY;

MOLECULAR BEAM EPITAXY;

EID: 0032680614     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00006-8     Document Type: Article

References (14)

1. Kirstaedter N., Ledentsov N.N., Grundmann M., Bimberg D., Ustinov V.M., Ruvimov S.S., Maximov M.V., Kop'ev P.S., Alferov Zh.I., Richter U., Werner P., Gosele U., Heydenreich J. Electron. Lett. 30:1994;1416.
2. Shoji H., Mukai K., Ohtsuka N., Sugawara M., Uchida T., Ishikawa H. IEEE Photonics Technol. Lett. 12:1995;1385.
3. O.G. Schmidt, N. Kirstaedter, N.N. Ledentsov, D. Bimberg, V.M. Ustinov, A.Yu Egorov, A.E. Zhukov, M.V. Maximov, P.S. Kop'ev, Zh. I. Alferov, IPRM'96 Conference Proceedings, 1996, p. 727.
4. Zhukov A.E., Egorov A.Yu., Kovsh A.R., Ustinov V.M., Maksimov M.V., Tsatsul'nikov A.F., Ledentsov N.N., Gordeev N.Yu., Zaitsev S.V., Kop'ev P.S., Alferov Zh.I., Bimberg D. Semiconductors. 31:1997;84.
5. Kamath K., Bhattacharya P., Sosnowski T., Norris T. J. Phillips Electron. Lett. 32:1996;1374.
6. T.-E. Nee, N.-T. Yeh, J.-I. Chyi, C.-T. Lee, Proceedings of the Second International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, Sapporo, Japan, 1998, p. 226.
7. Temmyo J., Kuramochi E., Sugo M., Nishiya T., Kamada H., Nozel R., Tamamura T. Electron. Lett. 31:1995;209.
8. Zhukov A.E., Egorov A.Yu., Kovsh A.R., Ustinov V.M., Ledentsov N.N., Maksimov M., Tsatsul'nikov A.F., Zaitsev S.V., Gordeev N.Yu., Kop'ev P.S., Alferov Zh.I., Bimberg D. Semiconductors. 31:1997;411.
9. Shoji H., Nakata Y., Mukai K., Sugiyama Y., Sugawara M., Yokoyama N., Ishikawa H. Appl. Phys. Lett. 71:1997;193.
10. Maksimov M.V., Gordeev N.Yu., Zaitsev S.V., Kop'ev P.S., Kochnev I.V., Ledentsov N.N., Lunev A.V., Ruvimov S.S., Sakharov A.V., Tsatsul'nikov A.F., Shernyakov Yu.M., Alferov Zh.I., Bimberg D. Semiconductors. 31:1997;124.
11. Chyi J.-I., Nee T.-E., Lee C.-T., Shieh J.-L., Pan J.-W. J. Crystal Growth. 175/176:1997;777.
12. K. Mukai, Y. Nakata, H. Shoji, M. Sugawara, K. Ohtsubo, T. Futatsugi, Y. Sugiyama, N. Yokoyama, H. Ishikawa, 10th International Conference On Indium Phosphide and Related Materials, Tsukuba, Japan, 1998, p.345.
13. Zaitsev S.V., Gordeev N.Yu., Kopchatov V.I., Georgievskii A.M., Ustinov V.M., Zhukov A.E., Egorov A.Yu., Kovsh A.R., Ledentsov N.N., Kop'ev P.S., Alferov Zh.I., Bimberg D. Semiconductors. 31:1997;947.
14. Nakahara K., Uomi K., Tsuchiya T., Niwa A. Electron. Lett. 32:1996;1200.